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GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER
FEATURES
* LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) * LOW NOISE FIGURE: 0.8 dB typical at 2 GHz * HIGH ASSOCIATED GAIN: 13.5 dB typical at 2 GHz * LG = 1.0 m, WG = 400 m * TAPE & REEL PACKAGING
4
NE76118
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, ID= 10 mA
20 GA
Noise Figure, NF (dB)
3
15 10
2
5 0
DESCRIPTION
The NE76118 is a low cost gallium arsenide metal semiconductor field effect transistor housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size and weight make it an ideal low noise amplifier transistor in the 1-4 GHz frequency range. The NE76118 is suitable for GPS, PCS, WLAN, MMDS, TVRO, and other commercial applications. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
1
NF
0 0.5 1 2 3 4 5 6 7 8 910
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE SYMBOL NF PARAMETERS AND CONDITIONS Noise Figure at VDS = 3 V, ID = 10 mA f = 2 GHz f = 4 GHz Associated Gain at VDS = 3 V, ID = 10 mA f = 2 GHz f = 4 GHz Output Power at 1 dB Gain Compression Point, f = 2 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA Gain at P1dB, f = 2 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA Saturated Drain Current at VDS = 3 V, VGS = 0 V Pinch Off Voltage at VDS = 3 V, ID = 100 A Transconductance at VDS = 3 V, ID = 10 mA Gate to Source Leakage Current at VGS = -5 V UNITS dB dB dB dB dBm dBm dB dB mA V mS A 30 -3.0 20 45 10 MIN NE76118 18 TYP 0.8 0.9 13.5 10.5 12 14 13 14 100 -0.5 MAX
1.4
GA
9.5
P1dB
G1dB
IDSS VP gm IGSO
Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories
Associated Gain, GA (dB)
25
NE76118 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VDS VGDO VGSO IDS TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V V mA C C mW RATINGS 5 -5 -6 IDSS 150 -65 to +150 130
TYPICAL NOISE PARAMETERS (TA = 25C)
VCE = 3 V, IC = 10 mA FREQ. (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 NFOPT (dB) 0.55 0.65 0.75 0.85 0.93 1.00 1.08 1.15 1.22 1.30 GA (dB) 23.0 18.0 16.0 14.2 12.9 11.7 10.7 10.0 9.2 8.5 MAG 0.77 0.78 0.80 0.79 0.78 0.76 0.72 0.64 0.45 0.28 OPT ANG 9 26 38 42 47 55 64 76 94 109 Rn/50 0.64 0.50 0.41 0.35 0.30 0.26 0.23 0.20 0.18 0.16
Note: 1.Operation in excess of any one of these parameters may result in permanent damage.
RECOMMENDED OPERATING CONDITIONS
SYMBOLS VDS ID PIN PARAMETERS Drain to Source Voltage Drain Current Input Power UNITS V mA dBm MIN TYP MAX 3 10 4 20 0
TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
100
Total Power Dissipation, PT (mW)
200
Drain Current, IDS (mA)
80 VGS 0 60 -0.2 40 -0.4
150
100
50
20
-0.6 -0.8 -1.0 0 1 2 3 4 5
0 0 50 100 150 200
0
Ambient Temperature, TA (C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
25
80 VDS = 3 V
Drain to Source Voltage, VDS (V) FORWARD INSERTION GAIN vs. DRAIN CURRENT
VDS = 3 V 20
Drain Current, IDS (mA)
f = 1 GHz
60
15
f = 2 GHz
40
10
20
5
0 -2.0
0
-1.0 0
1
2
3
5
7
10
20
Gate to Source Voltage, VGS (V)
Drain Current, ID (mA)
NE76118 TYPICAL SCATTERING PARAMETERS (TA = 25C)
VDS = 2 V, IDS = 10 mA
FREQUENCY (MHz) 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 MAG 1.001 0.998 0.944 0.988 0.980 0.972 0.961 0.951 0.937 0.924 0.846 0.761 0.678 0.604 0.536 0.472 0.414 0.356 S11 ANG -3.3 -6.5 -9.7 -12.9 -16.1 -19.3 -22.5 -25.7 -28.9 -32.0 -47.4 -61.7 -74.3 -85.0 -94.7 -103.8 -113.5 -123.7 MAG 3.816 3.800 3.785 3.773 3.763 3.741 3.717 3.689 3.651 3.615 3.403 3.138 2.856 2.605 2.397 2.227 2.106 2.011 S21 ANG 176.6 173.4 170.3 167.0 163.8 160.5 157.4 154.3 151.2 148.1 133.3 119.7 107.6 97.0 87.8 79.4 71.4 63.1 MAG 0.004 0.010 0.014 0.019 0.024 0.028 0.033 0.037 0.042 0.046 0.065 0.081 0.093 0.103 0.115 0.128 0.144 0.165 S12 ANG 80.8 89.7 85.1 83.3 82.6 80.2 79.9 78.0 76.7 74.7 68.5 63.8 60.6 59.5 60.1 61.0 62.4 63.8 MAG 0.730 0.728 0.726 0.724 0.721 0.716 0.712 0.707 0.701 0.694 0.659 0.621 0.590 0.570 0.554 0.536 0.515 0.492 S22 ANG -1.2 -2.2 -3.4 -4.5 -5.6 -6.8 -7.9 -9.0 -10.2 -11.3 -16.7 -21.5 -24.8 -26.9 -27.5 -27.2 -26.4 -26.0 0.07 0.02 0.10 0.15 0.17 0.22 0.24 0.28 0.31 0.36 0.51 0.67 0.82 0.94 1.04 1.11 1.14 1.14 K MAG1 (dB) 29.4 25.9 24.3 23.0 21.9 21.2 20.5 19.9 19.4 18.9 17.2 15.9 14.9 14.0 12.1 10.4 9.4 8.6
VDS = 2 V, IDS = 30 mA
FREQUENCY (MHz) 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 MAG 1.001 0.996 0.990 0.982 0.971 0.959 0.944 0.929 0.911 0.893 0.794 0.693 0.602 0.525 0.458 0.399 0.348 0.299 S11 ANG -3.7 -7.4 -10.9 -14.5 -18.1 -21.7 -25.2 -28.6 -32.1 -35.4 -51.5 -65.8 -77.8 -87.6 -95.9 -103.6 -111.9 -120.4 MAG 5.136 5.109 5.074 5.045 5.008 4.957 4.903 4.838 4.762 4.689 4.276 3.827 3.398 3.032 2.738 2.500 2.329 2.196 S21 ANG 176.2 172.4 168.8 165.2 161.6 157.9 154.3 151.0 147.5 144.1 128.5 114.7 102.7 92.5 83.8 76.0 68.6 61.1 MAG 0.004 0.009 0.013 0.016 0.021 0.024 0.028 0.032 0.036 0.039 0.056 0.070 0.083 0.097 0.111 0.127 0.147 0.172 S12 ANG 84.5 90.1 87.6 85.2 84.7 81.8 81.0 79.8 79.7 77.5 73.1 70.4 68.2 68.0 68.1 68.7 68.9 68.6 MAG 0.650 0.650 0.647 0.645 0.641 0.637 0.633 0.628 0.623 0.617 0.587 0.558 0.538 0.531 0.526 0.520 0.508 0.494 S22 ANG -1.1 -2.0 -2.9 -3.8 -4.8 -5.7 -6.7 -7.6 -8.5 -9.4 -13.6 -17.4 -19.7 -21.2 -21.5 -21.1 -20.3 -19.6 0.03 0.05 0.12 0.19 0.22 0.29 0.33 0.38 0.41 0.47 0.65 0.81 0.95 1.04 1.10 1.13 1.13 1.10 K MAG1 (dB) 31.3 27.7 26.1 25.1 23.7 23.1 22.4 21.9 21.3 20.8 18.9 17.4 16.1 13.8 12.0 10.8 9.9 9.1
VDS = 3 V, IDS = 10 mA
FREQUENCY (MHz) 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 MAG 1.001 0.998 0.993 0.988 0.979 0.972 0.961 0.951 0.937 0.924 0.847 0.762 0.679 0.605 0.536 0.471 0.412 0.355 S11 ANG -3.2 -6.5 -9.6 -12.8 -15.9 -19.2 -22.3 -25.5 -28.6 -31.7 -46.9 -61.2 -73.6 -84.3 -93.8 -102.7 -111.9 -121.2 MAG 3.840 3.825 3.808 3.795 3.786 3.764 3.741 3.712 3.675 3.638 3.427 3.162 2.877 2.622 2.410 2.237 2.115 2.022 S21 ANG 176.6 173.4 170.3 167.1 163.9 160.6 157.5 154.5 151.3 148.2 133.5 120.0 107.9 97.3 88.3 80.0 72.1 64.0 MAG 0.003 0.009 0.012 0.017 0.022 0.025 0.029 0.033 0.037 0.041 0.057 0.071 0.080 0.089 0.099 0.110 0.126 0.147 S12 ANG 95.2 90.4 85.4 84.7 83.3 80.9 79.7 77.8 77.5 75.2 69.3 65.2 62.3 61.9 63.5 65.5 68.1 70.6 MAG 0.763 0.763 0.761 0.759 0.756 0.752 0.748 0.743 0.738 0.732 0.698 0.662 0.632 0.613 0.597 0.582 0.566 0.548 S22 ANG -1.3 -2.2 -3.1 -4.1 -5.1 -6.1 -7.2 -8.2 -9.2 -10.3 -15.2 -19.6 -22.7 -24.5 -25.1 -24.6 -23.7 -23.1 -0.11 0.01 0.10 0.13 0.17 0.21 0.25 0.29 0.31 0.36 0.52 0.68 0.84 0.98 1.08 1.15 1.17 1.15 K MAG1 (dB) 30.6 26.2 24.9 23.5 22.4 21.7 21.1 20.5 20.0 19.5 17.8 16.5 15.5 14.7 12.2 10.7 9.8 9.1
NE76118 TYPICAL SCATTERING PARAMETERS (TA = 25 C)
VDS = 3 V, IDS = 30 mA
FREQUENCY (MHz) 100 200 300 400 500 600 700 800 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 Note: 1. Gain Calculations:
MAG = |S21| |S12|
S11 MAG 0.999 0.996 0.990 0.981 0.970 0.959 0.944 0.928 0.910 0.892 0.793 0.694 0.603 0.527 0.461 0.402 0.352 0.305 ANG -3.6 -7.4 -10.8 -14.5 -18.0 -21.6 -25.1 -28.5 -31.9 -35.3 -51.2 -65.3 -77.1 -86.7 -94.7 -102.0 -109.5 -117.2 MAG 5.174 5.143 5.106 5.076 5.037 4.984 4.929 4.861 4.786 4.709 4.290 3.836 3.401 3.032 2.735 2.497 2.327 2.199
S21 ANG 176.2 172.3 168.8 165.1 161.5 157.8 154.3 150.9 147.4 144.0 128.4 114.6 102.7 92.5 84.0 76.3 69.1 61.8 MAG 0.002 0.008 0.011 0.015 0.019 0.022 0.025 0.029 0.032 0.035 0.050 0.063 0.074 0.085 0.098 0.113 0.132 0.156
S12 ANG 102.3 92.4 84.5 84.5 83.6 81.3 81.1 80.1 79.3 77.9 73.3 70.7 69.5 69.9 70.8 72.2 73.4 74.1 MAG 0.695 0.695 0.694 0.691 0.688 0.683 0.680 0.674 0.669 0.663 0.633 0.604 0.584 0.574 0.570 0.564 0.557 0.545
S22 ANG -1.0 -1.9 -2.7 -3.7 -4.6 -5.5 -6.4 -7.3 -8.2 -9.1 -13.0 -16.6 -18.9 -20.3 -20.6 -20.1 -19.2 -18.6
K
MAG1 (dB)
-0.11 0.03 0.16 0.19 0.24 0.29 0.33 0.37 0.42 0.46 0.66 0.83 0.97 1.07 1.12 1.15 1.13 1.10
33.9 28.3 26.6 25.4 24.2 23.6 22.9 22.3 21.7 21.3 19.3 17.9 16.6 13.9 12.3 11.1 10.2 9.6
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 18
2.1 0.2 1.25 0.1
ORDERING INFORMATION
PART NUMBER NE76118-T1 QTY 3 K pcs per Reel1 3 K pcs per Reel2
+0.10 0.3 -0.05 (LEADS 2, 3, 4)
NE76118-T2
2.0 0.2
0.65
2
3 0.65 1.3 0.65
Notes: 1. Embossed tape 8 mm wide. Pin 3 (source) and pin 4 (drain) face perforated side of the tape. 2. Embossed tape 8 mm wide. Pin 1 (source) and pin 2 (gate) face perforated side of the tape.
V52
0.60
1 +0.10 0.4 -0.05 0.3
4
0.9 0.1
0 to 0.1
+0.10 0.15 -0.05
Pin Connections 1. Source 2. Gate 3. Source 4. Drain
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 7/18/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE

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